IRF1404PBF 数据手册
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技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Infineon Technologies IRF1404PBF
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 333W
- Total Gate Charge (Qg@Vgs): 196nC@10V
- Drain Source Voltage (Vdss): 40V
- Input Capacitance (Ciss@Vds): 5669pF@25V
- Continuous Drain Current (Id): 202A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 4mΩ@10V,121A
- Package: TO-220
- Manufacturer: Infineon Technologies